High current effects in double heterojunction bipolar transistors
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
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2. Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
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2. A direct extraction method to determine the extrinsic resistances for an InP HBT device based on S-parameter measurement up to 110GHz;Semiconductor Science and Technology;2020-06-22
3. Study of Switching and Kirk Effects in InAlAs/InGaAs/InAlAs Double Heterojunction Bipolar Transistors;JSTS:Journal of Semiconductor Technology and Science;2013-10-31
4. Sb-based semiconductors for low power electronics;Journal of Materials Chemistry C;2013
5. Low Turn-On Voltage and High-Current $\hbox{InP}/ \hbox{In}_{0.37}\hbox{Ga}_{0.63}\hbox{As}_{0.89}\hbox{Sb}_{0.11}/\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Double Heterojunction Bipolar Transistors;IEEE Electron Device Letters;2008-07
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