Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications-Reference-Cited by-同舟云学术

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Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications

Published:1999 Issue:8 Volume:47 Page:1433-1438
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Pin-Fan Chen ,Hsin U.-M.T.,Welty R.J.,Asbeck P.M.,Pierson R.L.,Zampardi P.J.,Ho W.-J.,Vincent Ho M.C.,Chang M.F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/16932/00780391.pdf?arnumber=780391

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-speed InP-based heterojunction bipolar transistors;Reference Module in Materials Science and Materials Engineering;2023

2. InP/GaAsSb DHBTs: THz Analog Performance and Record 180-Gb/s 5.5V_ppd-Swing PAM-4 DAC-Driver;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

3. A highly-compact packaging design for improving the thermal performance of multi-finger InGaP/GaAs collector-up HBTs;Solid-State Electronics;2011-02

4. A Composite Transistor to Suppress Kink Phenomenon in HBTs for Broadband Design;IEEE Electron Device Letters;2010-10

5. Novel Design of Thermal-Via Configurations for Collector-Up HBTs;Journal of Electronic Packaging;2009-10-21

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