Kirk effect mechanism in type-II InP∕GaAsSb double heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2783764
Reference20 articles.
1. 15-nm base type-II InP/GaAsSb/InP DHBTs with F/sub T/=384 GHz and a 6-V BV/sub CEO/
2. Performance enhancement of composition-graded-base type-II InP∕GaAsSb double-heterojunction bipolar transistors with fT>500GHz
3. Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy
4. Heavily carbon-doped GaAsSb grown on InP for HBT applications
5. Neutral base recombination in InP∕GaAsSb∕InP double-heterostructure bipolar transistors: Suppression of Auger recombination in p+ GaAsSb base layers
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1. High Current Operation in Type-II InP/GaAsSb/InGaAs Double Heterojunction Phototransistors;Applied Science and Convergence Technology;2023-11-10
2. Valence band offsets of ScxGa1−xN/AlN and ScxGa1−xN/GaN heterojunctions;Journal of Physics D: Applied Physics;2016-05-26
3. Study on mechanisms of InGaP/GaAs HBT safe operating area using TCAD simulation;International Journal of Microwave and Wireless Technologies;2015-04-10
4. (Ga,In)P emitter composition effect on the performance of (Ga,In)P/GaAsSb/InP DHBTs grown by MOCVD;physica status solidi (c);2010-06-15
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