Ion‐beam doping of GaAs with low‐energy (100 eV) C+using combined ion‐beam and molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359361
Reference26 articles.
1. Ion beam enhanced epitaxial growth of Ge (001)
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3. Photoluminescence studies of Si (100) doped with low‐energy (≤1000 eV) As+ions during molecular beam epitaxy
4. Strain modification in coherent Ge and SixGe1−xepitaxial films by ion‐assisted molecular beam epitaxy
5. Charged-particle interaction with liquids: Ripplon excitations
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2. Study of ion implanted Al0.25Ga0.75As/GaAs by Raman spectroscopy;Science in China Series A: Mathematics;2001-12
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4. Effect of nitrogen ion impingement during molecular beam epitaxy growth of GaAs as a function of acceleration energy;Materials Science and Engineering: B;2000-02
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