Effect of low-energy nitrogen molecular-ion impingement during the epitaxial growth of GaAs on the photoluminescence spectra
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123933
Reference13 articles.
1. Photoluminescence of nitrogen-doped VPE GaAs
2. Sharp photoluminescence lines from nitrogen atomic‐layer‐doped GaAs
3. Nitrogen pair luminescence in GaAs
4. Low energy nitrogen ion doping into GaAs using combined ion-beam and molecular-beam epitaxy method
5. Shallow-acceptor isoelectronic-impurity complexes in GaAs
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