Single-Photon Generation from Nitrogen Isoelectronic Traps in III-V Semiconductors-Reference-Cited by-同舟云学术

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Single-Photon Generation from Nitrogen Isoelectronic Traps in III-V Semiconductors

Published:2017-03-25 Issue: Volume: Page:125-142
ISSN:
Container-title:Micro- and Nanophotonic Technologies
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Author:

Sakuma Yoshiki¹,Ikezawa Michio²,Zhang Liao²

Affiliation:

1. National Institute for Materials Science; 1-1 Namiki Tsukuba Ibaraki 305-0044 Japan

2. University of Tsukuba; Institute of Physics; 1-1-1 Tennoudai Tsukuba Ibaraki 305-8571 Japan

Publisher

Wiley-VCH Verlag GmbH & Co. KGaA

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/9783527699940.ch7/fullpdf

Reference57 articles.

1. Bennett , C.H. Brassard , G. 1984 Proceedings of IEEE International Conference on Computers, Systems, and Signal Processing 175 179

2. Quantum cryptography;Gisin;Rev. Mod. Phys.,2002

3. Experimental quantum teleportation;Bouwmeester;Nature,1997

4. A scheme for efficient quantum computation with linear optics;Knill;Nature,2001

5. A quantum dot single-photon turnstile device;Michler;Supramol. Sci.,2000

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1. Enhanced Spontaneous Emission Rates for Single Isoelectronic Luminescence Centers in Photonic Crystal Cavities;ACS Photonics;2020-01-13

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