Photoluminescence studies of Si (100) doped with low‐energy (≤1000 eV) As+ions during molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102303
Reference15 articles.
1. Modeling of dopant incorporation, segregation, and ion/surface interaction effects during semiconductor film growth by molecular beam epitaxy and plasma-based techniques
2. Incorporation of in by recoil implantation during MBE growth of Si(100)
3. Electrical properties of Si(100) films doped with low‐energy (≤150 eV) Sb ions during growth by molecular beam epitaxy
4. Silicon molecular beam epitaxy with simultaneous ion implant doping
5. Model calculations for accelerated As ion doping of Si during molecular beam epitaxy
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