Dopant layer abruptness in strained Si[sub 1−x]Ge[sub x] heterostructures
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Published:2004
Issue:3
Volume:22
Page:939
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ISSN:0734-2101
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Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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language:en
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Short-container-title:J. Vac. Sci. Technol. A
Author:
Rowell N. L.,Houghton D. C.,Berbezier I.,Ronda A.,Webb D.,Ward M.
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics