Model calculations for accelerated As ion doping of Si during molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332140
Reference12 articles.
1. ’’Surface exchange’’ doping of MBE GaAs from S and Se ’’captive sources’’
2. Adsorption of Zn on GaAs
3. Surface segregation model for Sn‐doped GaAs grown by molecular beam epitaxy
4. Antimony Concentration in Silicon Epitaxial Layer Formed by Partially Ionized Vapor Deposition
5. Silicon molecular beam epitaxy with simultaneous ion implant doping
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