Antimony Concentration in Silicon Epitaxial Layer Formed by Partially Ionized Vapor Deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/15/i=6/a=1145/pdf
Cited by 41 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Delta doping in silicon;Critical Reviews in Solid State and Materials Sciences;1993-01
2. Room temperature epitaxial growth of Ag on low‐index Si surfaces by a partially ionized beam;Journal of Applied Physics;1992-07-15
3. ION- AND PHOTON-ASSISTED p-TYPE DOPING OF CdTe DURING PHYSICAL VAPOR DEPOSITION;International Journal of Solar Energy;1992-01
4. Room-temperature epitaxy of Cu on Si(111) using partially ionized beam deposition;Journal of Materials Research;1990-05
5. Partially ionized beam deposition of oriented films;Journal of Materials Research;1989-04
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