ION- AND PHOTON-ASSISTED p-TYPE DOPING OF CdTe DURING PHYSICAL VAPOR DEPOSITION-Reference-Cited by-同舟云学术

ION- AND PHOTON-ASSISTED p-TYPE DOPING OF CdTe DURING PHYSICAL VAPOR DEPOSITION

Published:1992-01 Issue:1-4 Volume:12 Page:197-221
ISSN:0142-5919
Container-title:International Journal of Solar Energy
language:en
Short-container-title:International Journal of Solar Energy

Author:

FAHRENBRUCH A.L.,BUBE R. H.,KIM D.,LOPEZ-OTERO A.

Publisher

Informa UK Limited

Subject

Fluid Flow and Transfer Processes,Process Chemistry and Technology,General Energy,Fuel Technology,Water Science and Technology,Renewable Energy, Sustainability and the Environment

Link

http://www.tandfonline.com/doi/pdf/10.1080/01425919208909763

Reference85 articles.

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3. Summary Abstract: Thermal and accelerated (≤200 eV) In doping of Si(100) layers during molecular beam epitaxy

4. Ionized beam doping in molecular‐beam epitaxy of GaAs and AlxGa1−xAs

5. Ionized Zn doping of GaAs molecular beam epitaxial films

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