Summary Abstract: Thermal and accelerated (≤200 eV) In doping of Si(100) layers during molecular beam epitaxy-Reference-Cited by-同舟云学术

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Summary Abstract: Thermal and accelerated (≤200 eV) In doping of Si(100) layers during molecular beam epitaxy

Published:1986-05 Issue:3 Volume:4 Page:900-901
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Rockett A.,Knall J.,Hassan M. A.,Sundgren J.‐E.,Barnett S. A.,Greene J. E.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.574002

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ION- AND PHOTON-ASSISTED p-TYPE DOPING OF CdTe DURING PHYSICAL VAPOR DEPOSITION;International Journal of Solar Energy;1992-01

2. Ion-assisted doping of CdTe;Solar Cells;1989-10

3. Incorporation of in by recoil implantation during MBE growth of Si(100);Surface Science;1989-04

4. Monte Carlo Simulations of Molecular Beam Epitaxy on Si(001) Surfaces;Journal of The Electrochemical Society;1989-04-01

5. Influence of the Si evaporation source on the incorporation of In during Si molecular-beam epitaxy growth: A comparative study of magnetically and electrostatically-focused electron-gun evaporators;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1989-03

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