Influence of the Si evaporation source on the incorporation of In during Si molecular-beam epitaxy growth: A comparative study of magnetically and electrostatically-focused electron-gun evaporators
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Published:1989-03
Issue:2
Volume:7
Page:204
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
6 articles.
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