Strain modification in coherent Ge and SixGe1−xepitaxial films by ion‐assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103877
Reference14 articles.
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1. Role of fast sputtered particles during sputter deposition: Growth of epitaxialGe0.99C0.01/Ge(001);Physical Review B;2000-10-15
2. Growth and Characterization of InGaN/GaN Heterostructures Using Plasma-Assisted Molecular Beam Epitaxy;MRS Proceedings;1999
3. Ion assisted MBE growth of SiGe nanostructures;Thin Solid Films;1998-12
4. Unusual strain relaxation in SiGe/Si heterostructures;Applied Physics Letters;1997-03-10
5. Ion beam deceleration characteristics of a high‐current, mass‐separated, low‐energy ion beam deposition system;Review of Scientific Instruments;1996-10
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