Continuously operated visible‐light‐emitting lasers using liquid‐phase‐epitaxial InGaPAs grown on GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94155
Reference14 articles.
1. New heteroisolation stripe-geometry visible-light-emitting lasers
2. Pulsed room‐temperature operation of In1−xGaxP1−zAszdouble heterojunction lasers at high energy (6470 Å, 1.916 eV)
3. Red‐emitting Ga(As,P)/(In,Ga)P heterojunction lasers
4. Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP
5. Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy Gaps
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1. Oxygen in InxGa1−xAsyP1–y Grown on GaAs;physica status solidi (b);1992-08-01
2. Liquid Phase Epitaxy of Miscible and Immiscible GaInPAs Alloys on (100)-Oriented GaPxAs1-x(x=0, 0.2, 0.4) Substrates;Japanese Journal of Applied Physics;1990-11-20
3. New double‐heterostructure indium‐tin oxide/InGaAsP/AlGaAs surface light‐emitting diodes at 650‐nm range;Journal of Applied Physics;1989-09
4. Lasing characteristics of 0.8‐μm InGaAsP/GaAs lasers fabricated by wet chemical etching;Journal of Applied Physics;1989-05-15
5. A simple method for monolithic fabrication of InGaAsP/GaAs lasers;Journal of Applied Physics;1988-09
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