New double‐heterostructure indium‐tin oxide/InGaAsP/AlGaAs surface light‐emitting diodes at 650‐nm range
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344315
Reference28 articles.
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3. Continuously operated visible‐light‐emitting lasers using liquid‐phase‐epitaxial InGaPAs grown on GaAs substrates
4. Low-threshold InGaAsP/InGaP lasers at 810 nm grown on GaAs substrate by LPE
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