Influence of phosphorus vapor ambient for InGaAsP growth on GaAs substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337562
Reference14 articles.
1. Pulsed room‐temperature operation of In1−xGaxP1−zAszdouble heterojunction lasers at high energy (6470 Å, 1.916 eV)
2. Continuously operated visible‐light‐emitting lasers using liquid‐phase‐epitaxial InGaPAs grown on GaAs substrates
3. Low-threshold InGaAsP/InGaP lasers at 810 nm grown on GaAs substrate by LPE
4. Low threshold current density of GaInAsP visible injection laser diodes lattice matched with (100) GaAs emitting at 705 nm
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Properties of Manganese‐Doped InGaAsP Grown on GaAs Substrates;Journal of The Electrochemical Society;1990-01-01
2. New double‐heterostructure indium‐tin oxide/InGaAsP/AlGaAs surface light‐emitting diodes at 650‐nm range;Journal of Applied Physics;1989-09
3. Lasing characteristics of 0.8‐μm InGaAsP/GaAs lasers fabricated by wet chemical etching;Journal of Applied Physics;1989-05-15
4. AlGaAs burying growth for InGaAsP/GaAs buried heterostructure lasers by liquid-phase epitaxy;Journal of Crystal Growth;1989-04
5. A simple method for monolithic fabrication of InGaAsP/GaAs lasers;Journal of Applied Physics;1988-09
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