Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy Gaps
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1657312
Reference15 articles.
1. Injection Electroluminescence in (AlxGa1−x)As Diodes of Graded Energy Gap
2. EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1‐xAlxAs p‐n JUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY
3. Ga-Al-As: Phase, thermodynamic and optical properties
4. Conduction Band Minima in AlAs and AlSb
5. Conduction Band Minima ofGa(As1−xPx)
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