Red‐emitting Ga(As,P)/(In,Ga)P heterojunction lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325307
Reference27 articles.
1. Room‐temperature heterojunction laser diodes from vapor‐grown In1−xGaxP/GaAs structures
2. cw room‐temperature InxGa1−xAs/InyGa1−yP 1.06‐μm lasers
3. Low‐threshold room‐temperature double‐heterostructure GaAs1−xSbx/AlyGa1−yAs1−xSbxinjection lasers at 1‐μm wavelengths
4. Continuous operation of 1.0‐μm‐wavelength GaAs1−xSbx/AlyGa1−yAs1−xSbxdouble‐heterostructure injection lasers at room temperature
5. Pulsed room‐temperature operation of In1−xGaxP1−zAszdouble heterojunction lasers at high energy (6470 Å, 1.916 eV)
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1. Lasing operation up to 200 K in the wavelength range of 570–590 nm by GaInP/AlGaInP double‐heterostructure laser diodes on GaAsP substrates;Applied Physics Letters;1995-02-13
2. Growth and characterization of Ga0.65In0.35P orange light‐emitting diodes by metalorganic vapor–phase epitaxy;Journal of Applied Physics;1993-08
3. Epitaxial growth of AlGaInP lattice-matched to GaAsP substrates by organometallic vapor phase epitaxy;Journal of Crystal Growth;1993-02
4. Growth and Characterization of InGaP Yellow-Green Light-Emitting Diodes by Liquid-Phase Epitaxy;Japanese Journal of Applied Physics;1992-05-15
5. Magnesium doping in In0.32Ga0.68P grown by liquid‐phase epitaxy;Journal of Applied Physics;1992-05
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