Dependence of threshold current density on quantum well composition for strained‐layer InGaAs‐GaAs lasers by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101986
Reference19 articles.
1. Strained‐layer quantum‐well injection laser
2. Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition
3. Continuous room‐temperature operation of an InGaAs‐GaAs‐AlGaAs strained‐layer laser
4. High‐power phase‐locked InGaAs strained‐layer quantum well heterostructure periodic laser array
5. InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition
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