Swift heavy-ion modification of semiconductor heterostructures

Author:

Pathak A. P.,Dhamodaran S.,Sathish N.,Srinivasa Rao N.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Degradation mechanisms of optoelectric properties of GaN via highly-charged 209Bi33+ ions irradiation;Applied Surface Science;2018-05

2. Damage to epitaxial GaN layer on Al2O3 by 290-MeV 238U32+ ions irradiation;Scientific Reports;2018-03-07

3. Irradiation Induced Effects on the Optical Properties of a-GaSe Thin Films;Materials Focus;2017-10-01

4. Influence of highly-charged 209 Bi 33+ irradiation on structure and optoelectric characteristics of GaN epilayer;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-09

5. Effects of irradiation of 290MeV U-ions in GaN epi-layers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07

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