Damage to epitaxial GaN layer on Al2O3 by 290-MeV 238U32+ ions irradiation
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-22321-w.pdf
Reference54 articles.
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4. Wang, W. L., Yang, W. J. & Gao, F. L. Highly-efficient GaN-based light-emitting diode wafers on La0.3Sr1.7AlTaO6 substrates. Sci. Rep. 5, 9315 (2015).
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