Continuous room‐temperature operation of an InGaAs‐GaAs‐AlGaAs strained‐layer laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98479
Reference23 articles.
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4. Disorder of an InxGa1−xAs‐GaAs superlattice by Zn diffusion
5. Photoluminescence of InxGa1-xAs-GaAs strained-layer superlattices
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1. Surface modification of InGaAs/GaAs heterostructures by swift heavy ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-04
2. Low- and high-energy irradiations of InGaAs/GaAs heterostructures: a comparison;Radiation Effects and Defects in Solids;2007-04
3. Interfacial Microstructure of InxGa1-xAs/GaAs Strained Layers;Materials Science Forum;1995-07
4. Depth profiling of InAs/InP and heterostructures grown by molecular beam epitaxy;Materials Science and Engineering: B;1994-12
5. Characterization study of strained InxGa1−xAs/GaAs superlattices;Journal of Applied Physics;1994-11-15
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