Electrical and optical properties of Be‐doped InP grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332045
Reference12 articles.
1. Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
2. Beryllium doping in Ga0.47In0.53As and Al0.48In0.52As grown by molecular‐beam epitaxy
3. Room‐temperature operation of lattice‐matched InP/Ga0.47In0.53As/InP double‐heterostructure lasers grown by MBE
4. Near Room Temperature CW Operation at 1.70 µm of MBE Grown InGaAs/InP DH Lasers
5. Indium Phosphide
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comprehensive study of Cp 2 Mg p-type doping of InP with MOVPE growth technique;Journal of Alloys and Compounds;2015-12
2. Beryllium diffusion and influence on the luminescent and electrical properties of indium phosphide;Technical Physics Letters;2006-08
3. Physical modeling of degenerately doped compound semiconductors for high-performance HBT design;Solid-State Electronics;2006-07
4. Electrical and optical properties of Be-doped InP grown at low temperature by solid source atomic layer molecular beam epitaxy;Journal of Applied Physics;1999-05
5. Investigations of beryllium in CBE grown epitaxial layers and profiling of multilayers by electro-chemical C–V measurements;Materials Chemistry and Physics;1999-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3