Author:
Li James C.,Sokolich Marko,Hussain Tahir,Asbeck Peter M.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Hussain T, Royter Y, Hitko D, Montes M, Milosavljevic I, Rajavel R. et al. First demonstration of sub-0.25μm-width emitter InP-DHBTs with >400 GHz ft and >400 GHz fmax. 2004 IEDM Technical Digest.
2. InGaAs/InP DHBTs with 120-nm collector having simultaneously high fτ, fmax⩾450GHz;Griffith;IEEE Electron Dev Lett,2005
3. Submicrometer scaling of heterojunction bipolar transistors;Rodwell;IEEE Trans Electron Dev,2001
4. Empirical low-field mobility model for III-V compounds application to device simulation codes;Sotoodeh;J Appl Phys,2000
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