LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications-Reference-Cited by-同舟云学术

LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications

Published:2016-01-01 Issue:2 Volume:24 Page:
ISSN:1230-3402
Container-title:Opto-Electronics Review
language:
Short-container-title:

Author:

Ściana B.,Badura M.,Dawidowski W.,Bielak K.,Radziewicz D.,Pucicki D.,Szyszka A.,Żelazna K.,Tłaczała M.

Abstract

AbstractThe work presents doping characteristics and properties of high Si−doped InGaAs epilayers lattice−matched to InP grown by low pressure metal−organic vapour phase epitaxy. Silane and disilane were used as dopant sources. The main task of investigations was to obtain heavily doped InGaAs epilayers suitable for usage as plasmon−confinement layers in the construction of mid−infrared InAlAs/InGaAs/InP quantum−cascade lasers (QCLs). It requires the doping concentration of 1×10

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Radiation,General Materials Science

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