Non-destructive characterization of thin layer resonant tunneling diodes-Reference-Cited by-同舟云学术

Non-destructive characterization of thin layer resonant tunneling diodes

Published:2019-09-28 Issue:12 Volume:126 Page:124304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Baba Răzvan¹^ORCID,Jacobs Kristof J. P.²,Harrison Brett A.²³,Stevens Ben J.²³^ORCID,Mukai Toshikazu⁴,Hogg Richard A.¹^ORCID

Affiliation:

1. School of Engineering, University of Glasgow, Oakfield Avenue, G12 8LT Glasgow, United Kingdom

2. Department of Electronic and Electrical Engineering, The University of Sheffield, Solly Street, S1 4DE Sheffield, United Kingdom

3. EPSRC National Epitaxy Facility, North Campus, Broad Lane, S3 7HQ Sheffield, United Kingdom

4. ROHM Co., Ltd., 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585 Japan

Funder

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5113585

Reference51 articles.

1. Superlattice and Negative Differential Conductivity in Semiconductors

2. 1.98 THz resonant-tunneling-diode oscillator with reduced conduction loss by thick antenna electrode

3. Wide frequency tuning in resonant-tunneling-diode terahertz oscillator using forward-biased varactor diode

4. Capacitance Anomaly in the Negative Differential Resistance Region of Resonant Tunneling Diodes

5. K. J. P. Jacobs, “Development of resonant tunnelling diode terahertz emitter,” Ph.D. thesis (Department of Electronic and Electrical Engineering, The University of Sheffield, 2015).

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