Photoluminescence excitation spectroscopy for structural and electronic characterization of resonant tunneling diodes for THz applications-Reference-Cited by-同舟云学术

Photoluminescence excitation spectroscopy for structural and electronic characterization of resonant tunneling diodes for THz applications

Published:2021-03-01 Issue:3 Volume:11 Page:035122
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Cito M.¹^ORCID,Kojima O.²^ORCID,Stevens B. J.³,Mukai T.⁴,Hogg R. A.¹^ORCID

Affiliation:

1. School of Engineering, University of Glasgow, Oakfield Avenue, G12 8LT Glasgow, United Kingdom

2. Department of Electrical and Electronic Engineering, Kobe University, Kobe 657-8501, Japan

3. EPSRC National Centre for III-V Technologies, Department of Electronic & Electrical Engineering, University of Sheffield, North Campus, Broad Lane, Sheffield S37HQ, United Kingdom

4. Sensing Technology R&D Project, R&D Headquarters, RohmCo.Ltd., 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan

Funder

H2020 Marie Skłodowska-Curie Actions

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0035394

Reference21 articles.

1. Edholm's law of bandwidth

2. Terahertz technologies: present and future

3. Fundamental Oscillation up to 1.31 THz in Resonant Tunneling Diodes with Thin Well and Barriers

4. Operation of resonant-tunneling diodes with strong back injection from the collector at frequencies up to 1.46 THz

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2. Micro-PL analysis of high current density resonant tunneling diodes for THz applications;Applied Physics Letters;2021-08-16