Room‐temperature operation of lattice‐matched InP/Ga0.47In0.53As/InP double‐heterostructure lasers grown by MBE
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90186
Reference16 articles.
1. Multicomponent solid-solution semiconductor lasers
2. Room‐temperature operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μm
3. Low‐threshold double heterojunction AlGaAs/GaAs laser diodes: Theory and experiment
4. Growth and characterization of lattice‐matched epitaxial films of GaxIn1−xAs/InP by liquid‐phase epitaxy
5. Liquid‐phase‐epitaxial growth of lattice‐matched In0.53Ga0.47As on (100) ‐oriented InP
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