Measurement of the Schottky barrier height between Ni-InGaAs alloy and In0.53Ga0.47As
Author:
Affiliation:
1. Department of Electrical Engineering, Technion–Israel Institute of Technology, Haifa 32000, Israel
2. Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference11 articles.
1. CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs
2. Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As
3. Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal–Oxide–Semiconductor Field-Effect Transistors Using Ni–InGaAs Alloy
4. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts (Clarendon Press, Oxford, 1988), pp. 89–129.
5. Origin of the Excess Capacitance at Intimate Schottky Contacts
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