Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3607959
Reference22 articles.
1. Recent developments in ohmic contacts for III–V compound semiconductors
2. Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact ton‐type GaAs
3. Complex nature of gold-related deep levels in silicon
4. Donor and acceptor behavior of gold in silicon
5. Solid-phase epitaxial Pd/Ge ohmic contacts to In1-xGaxAsyP1-y/InP
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