Solid-phase epitaxial Pd/Ge ohmic contacts to In1-xGaxAsyP1-y/InP-Reference-Cited by-同舟云学术

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Solid-phase epitaxial Pd/Ge ohmic contacts to In1-xGaxAsyP1-y/InP

Published:1986-08 Issue:8 Volume:7 Page:471-473
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chen W.X.,Hsueh S.C.,Yu P.K.L.,Lau S.S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31967/01486266.pdf?arnumber=1486266

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon fab-compatible contacts to n-InP and p-InGaAs for photonic applications;Applied Physics Letters;2012-05-14

2. Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As;Applied Physics Letters;2011-07-04

3. Selective Deposition of Ohmic Contacts to p-InGaAs by Electroless Plating;Journal of The Electrochemical Society;2008

4. Modified transmission line model to investigate non-Ohmic contact behavior and its application on GaN;Journal of Applied Physics;2007-04-15

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