Author:
Lysczek E. M.,Mohney S. E.
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology
2. M. Urteaga, P. Rowell, R. Pierson, B. Brar, M. Dahlstrom, Z. Griffith, M. Rodwell, S. Lee, N. Nguyen, and C. Nguyen , inDRC 2004, Conference Digest, p. 239 (2004).
3. Wideband DHBTs using a graded carbon-doped InGaAs base
4. Z. Griffith, E. Lind, M. J. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, J. M. Fastenau, and W. K. Liu , in2007 Conference on InP and Related Materials, p. 403 (2007).
5. Stability and noise of PdGeAgAu ohmic contacts to InGaAsInAlAs high electron mobility transistors
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献