Reducing Contact Resistance Between Ni-InGaAs and n-In0.53Ga0.47As using Sn Interlayer in n-In0.53Ga0.47As MOSFETs
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Published:2018-06-30
Issue:3
Volume:18
Page:301-306
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ISSN:1598-1657
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Container-title:JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
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language:en
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Short-container-title:JSTS
Author:
Li Meng,Shin Geonho,Lee Jeongchan,Lee Seung Min,Oh Jungwoo,Lee Hi-Deok
Publisher
The Institute of Electronics Engineers of Korea
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials