Near-ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1834729
Reference19 articles.
1. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
2. Characterization of different-Al-content Al[sub x]Ga[sub 1−x]N/GaN heterostructures and high-electron-mobility transistors on sapphire
3. Lattice and energy band engineering in AlInGaN/GaN heterostructures
4. Spontaneous and piezoelectric polarization effects in III–V nitride heterostructures
5. Spontaneous polarization and piezoelectric constants of III-V nitrides
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1. Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors;Journal of Physics D: Applied Physics;2019-12-03
2. Thermal Annealing Effects on the Electrical and Structural Properties of Ni/Pt Schottky Contacts on the Quaternary AlInGaN Epilayer;Journal of Electronic Materials;2018-11-15
3. Gaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloy;Journal of Vacuum Science & Technology B;2018-11
4. Electronic Transport Properties in AlInGaN/AlGaN Heterostructures;physica status solidi (a);2018-02-26
5. Current transport mechanisms in Pt/Au Schottky contacts to AlInGaN using AlGaN/InGaN short-period superlattices;Applied Physics A;2017-04-12
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