Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors

Published:2019-12-03 Issue:6 Volume:53 Page:065103
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Cui Peng^ORCID,Zhang Jie^ORCID,Yang Tzu-Yi^ORCID,Chen Hang^ORCID,Zhao Haochen^ORCID,Lin Guangyang^ORCID,Wei Lincheng^ORCID,Xiao John Q^ORCID,Chueh Yu-Lun^ORCID,Zeng Yuping^ORCID

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6463/ab5728/pdf

Reference35 articles.

1. Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

2. High-$f_{{\rm MAX}}$ High Johnson's Figure-of-Merit 0.2- $\mu{\rm m}$ Gate AlGaN/GaN HEMTs on Silicon Substrate With ${\rm AlN}/{\rm SiN}_{{\rm x}}$ Passivation

3. 1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

4. High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

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1. Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors;Journal of Physics and Chemistry of Solids;2024-04

2. Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment;Crystals;2022-10-26

3. Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications;Scientific Reports;2022-10-06

4. Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N₂O radical treatment;Chinese Physics B;2022-05-01

5. Improving Gate Reliability of 6-In E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment;IEEE Transactions on Electron Devices;2022-01