Highly strained AlAs-type interfaces in InAs/AlSb heterostructures-Reference-Cited by-同舟云学术

Highly strained AlAs-type interfaces in InAs/AlSb heterostructures

Published:2016-05-23 Issue:21 Volume:108 Page:211908
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Vallet M.¹²,Claveau Y.¹,Warot-Fonrose B.¹²,Gatel C.¹²,Nicolai J.¹²,Combe N.¹,Magen C.²³,Teissier R.⁴,Baranov A. N.⁴^ORCID,Ponchet A.¹²^ORCID

Affiliation:

1. CEMES CNRS-UPR 8011, Université de Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse, France

2. Transpyrenean Associated Laboratory for Electron Microscopy (TALEM), CEMES-INA, CNRS-Universidad de Zaragoza, Toulouse, France

3. Laboratorio de Microscopias Avanzadas (LMA), Instituto de Nanociencia de Aragon (INA)—ARAID and Departamento de Fisica de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza, Spain

4. Institute of Electronics and Systems, UMR 5214 CNRS – University of Montpellier, 34095 Montpellier, France

Funder

Agence Nationale de la Recherche (ANR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4952951

Reference14 articles.

1. Quantitative analysis of interfacial strain in InAs/GaSb superlattices by aberration-corrected HRTEM and HAADF-STEM

2. Formation of strained interfaces in AlSb/InAs multilayers grown by molecular beam epitaxy for quantum cascade lasers

3. Elastic strains at interfaces in InAs/AlSb multilayer structures for quantum cascade lasers

4. Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography

5. Interfacial chemistry in a ZnTe/CdSe superlattice studied by atom probe tomography and transmission electron microscopy strain measurements

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