Van der Waals integration of artificial heterostructures and high-order superlattices
Author:
Publisher
Science China Press., Co. Ltd.
Link
https://engine.scichina.com/doi/pdf/D62C26BA98D84A0C88646247FD2F074C
Reference64 articles.
1. Arthur JR. Molecular beam epitaxy of compound semiconductors. Surf Sci, 1994, 299-300: 818-823.
2. Matthews JW, Blakeslee AE. Defects in epitaxial multilayers. J Cryst Growth 1974, 27: 118-125.
3. Vallet M, Claveau Y, Warot-Fonrose B. Highly strained AlAs-type interfaces in InAs/AlSb heterostructures. Appl Phys Lett, 2016, 108:
4. Niehle M, Rodriguez JB, Cerutti L. On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): A comprehensive transmission electron tomography and microscopy study. Acta Mater, 2018, 143: 121-129.
5. Ni Y, Zhou D, Chen Z. Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate. Semicond Sci Technol, 2015, 30:
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Two-dimensional molecular crystal Sb2O3 for electronics and optoelectronics;Applied Physics Reviews;2024-05-31
2. Exciton Localization Modulated by Ultradeep Moiré Potential in Twisted Bilayer γ-Graphdiyne;Journal of the American Chemical Society;2024-05-08
3. SYNTHESIS AND CHARACTERIZATION OF CdS/CuAlO2/ITO NANO HETEREOSTRUCTURE NOVEL LED FOR OPTOELECTRONIC APPLICATIONS;MOMENTO;2024-01-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3