Two-dimensional molecular crystal Sb2O3 for electronics and optoelectronics

Author:

Yu Jing1234ORCID,Han Wei25ORCID,Ong Ruey Jinq1ORCID,Shi Jing-Wen6,Suleiman Abdulsalam Aji7ORCID,Liu Kailang8ORCID,Ling Francis Chi-Chung1ORCID

Affiliation:

1. Department of Physics, The University of Hong Kong 1 , Hong Kong 999077, People's Republic of China

2. Hubei Yangtze Memory Laboratories, Wuhan 2 , Hubei 430205, People's Republic of China

3. Department of Physics and Astronomy, University of Manchester 3 , Manchester M13 9PL, United Kingdom

4. National Graphene Institute, University of Manchester 4 , Manchester M13 9PL, United Kingdom

5. Institute of Microelectronics and Integrated Circuits, School of Microelectronics, Hubei University 5 , Wuhan 430062, China

6. School of Chemistry, South China Normal University 6 , Guangzhou, 510006, People's Republic of China

7. Institute of Materials Science and Nanotechnology, Bilkent University UNAM 7 , Ankara 06800, Türkiye

8. State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology 8 , Wuhan, China

Abstract

As a two-dimensional (2D) inorganic molecular van der Waals crystal, Sb2O3 has been widely recognized as an excellent dielectric and encapsulation material due to its wide bandgap, high dielectric constant (κ), and remarkably high air stability. Considering the significance and potential application of Sb2O3 in future electronic devices, it is valuable to summarize its recent advancements. In this review, we present the latest progress on 2D Sb2O3 flakes and films, encompassing synthesis methods, physical properties, and device applications. First, preparation strategies such as chemical vapor deposition, vertical physical vapor deposition, thermal evaporation deposition, liquid metal synthesis, and atomic layer deposition growth routes are highlighted. Subsequently, the mechanical properties and the phase transition mechanisms of 2D Sb2O3 are presented. Moreover, device applications, including encapsulation layer, photodetector, and gate dielectric, are demonstrated. Finally, we outline the future challenges and research priorities of 2D Sb2O3 materials.

Funder

National Natural Science Foundation of China

Special Project for Research and Development in Key areas of Guangdong Province

Innovation and Technology Fund

Major Programof Hubei Province

Publisher

AIP Publishing

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