First-principles study of the structural and electronic properties of (100)Ge∕Ge(M)O2 interfaces (M=Al, La, or Hf)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2944892
Reference21 articles.
1. Growth mechanism difference of sputtered HfO2 on Ge and on Si
2. Nanoscale germanium MOS Dielectrics-part II: high-/spl kappa/ gate dielectrics
3. HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition
4. Interface traps and dangling-bond defects in (100)Ge∕HfO2
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