Realizing crack-free high-aluminum-mole-fraction AlGaN on patterned GaN beyond the critical layer thickness-Reference-Cited by-同舟云学术

Realizing crack-free high-aluminum-mole-fraction AlGaN on patterned GaN beyond the critical layer thickness

Published:2022-02-21 Issue:7 Volume:131 Page:073103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mehnke Frank¹^ORCID,Fischer Alec M.²^ORCID,Xu Zhiyu¹^ORCID,Bouchard Henri¹^ORCID,Detchprohm Theeradetch¹^ORCID,Shen Shyh-Chiang¹^ORCID,Ponce Fernando A.²^ORCID,Dupuis Russell D.¹^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Center for Compound Semiconductors, 777 Atlantic Drive, Atlanta, Georgia 30332, USA

2. Department of Physics and Bateman Physical Science, Arizona State University, F-Wing (PSF470), Tempe, Arizona 85287, USA

Funder

Steve W. Chaddick Chair in Electro-Optics

Steve W. Chaddick Fellowship

National Science Foundation

U.S. Department of Energy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0073489