Wide bandgap semiconductor materials and devices-Reference-Cited by-同舟云学术

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Wide bandgap semiconductor materials and devices

Published:2022-06-21 Issue:23 Volume:131 Page:230401
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Varley Joel B.¹^ORCID,Shen Bo²,Higashiwaki Masataka³⁴^ORCID

Affiliation:

1. Lawrence Livermore National Laboratory, Livermore, California 94550, USA

2. Department of Physics, Peking University, Beijing, China

3. Department of Physics and Electronics, Osaka Metropolitan University, Osaka 599-8531, Japan

4. National Institute of Information and Communications Technology, Tokyo 184-8795, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0100601

Reference44 articles.

1. High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors

2. In-operando x-ray topography analysis of SiC metal–oxide–semiconductor field-effect transistors to visualize stacking fault expansion motions dynamically during operations

3. Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling

4. Probing the surface potential of SiO2/4H-SiC(0001) by terahertz emission spectroscopy

5. Influence of the facet trace region in 4H-SiC substrate on the glide and propagation behaviors of basal plane dislocations in 4H-SiC homoepitaxial layers

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2. Quantification of the strong, phonon-induced Urbach tails in β-Ga2O3 and their implications on electrical breakdown;Journal of Applied Physics;2024-07-15

3. Review on Power Cycling Reliability of SiC Power Device;Electronic Materials;2024-06-10

4. Synthesis of Ultrawide Band Gap TeO₂ Nanoparticles by Pulsed Laser Ablation in Liquids: Top Ablation versus Bottom Ablation;ACS Omega;2024-06-05

5. Achieving a High-Responsivity and Fast-Response-Speed Solar-Blind Photodetector for Underwater Optical Communication via AlGaN/AlN/GaN Heterojunction Nanowires;ACS Applied Electronic Materials;2024-05-22

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