Probing the surface potential of SiO2/4H-SiC(0001) by terahertz emission spectroscopy-Reference-Cited by-同舟云学术

Probing the surface potential of SiO2/4H-SiC(0001) by terahertz emission spectroscopy

Published:2021-09-21 Issue:11 Volume:130 Page:115305
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nakanishi Hidetoshi¹^ORCID,Nishimura Tatsuhiko¹,Kawayama Iwao²³^ORCID,Tonouchi Masayoshi²^ORCID,Hosoi Takuji⁴^ORCID,Shimura Takayoshi⁴^ORCID,Watanabe Heiji⁴^ORCID

Affiliation:

1. SCREEN Holdings Co., Ltd., Kyoto 612-8486, Japan

2. Institute of Laser Engineering, Osaka University, Osaka 565-0871, Japan

3. Graduate School of Energy Science, Kyoto University, Kyoto 606-8501, Japan

4. Graduate School of Engineering, Osaka University, Osaka 565-0871, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0058962

Reference42 articles.

1. Fundamentals of Silicon Carbide Technology

2. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices

3. Development of SiC Applied Traction System for Next-Generation Shinkansen High-Speed Trains

4. Material science and device physics in SiC technology for high-voltage power devices

5. Defect engineering in SiC technology for high-voltage power devices

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