Compositional analysis of AlInGaN quaternary layers grown by metalorganic vapour phase epitaxy-Reference-Cited by-同舟云学术

Compositional analysis of AlInGaN quaternary layers grown by metalorganic vapour phase epitaxy

Published:2003-11-24 Issue:7 Volume: Page:2478-2481
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Amabile D.¹,Martin R. W.¹,Wang T.²,Whitehead M. A.²,Parbrook P. J.²

Affiliation:

1. Department of Physics, University of Strathclyde, John Anderson Building, 107 Rottenrow, Glasgow G4 0NG, UK

2. EPSRC National Centre for III‐V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, S1 3JD, Sheffield, UK

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303515

Reference8 articles.

1. High optical quality AlInGaN by metalorganic chemical vapor deposition

2. Growth and optical properties of InxAlyGa1−x−yN quaternary alloys

3. Microcomposition and Luminescence of InGaN Emitters

4. C.Merlet Proceedings of the 29th annual conference of the Microbeam Analysis Society 203 (1995).

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