Multiple implantation and multiple annealing of phosphorus doped germanium to achieve n-type activation near the theoretical limit
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4751845
Reference17 articles.
1. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
2. Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon
3. Direct band Ge photoluminescence near 1.6 μm coupled to Ge-on-Si microdisk resonators
4. High Performance 60 nm Gate Length Germanium p-MOSFETs with Ni Germanide Metal Source/Drain
5. Mobility Scaling in Short-Channel Length Strained Ge-on-Insulator P-MOSFETs
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