Suppression of Phosphorous Out-Diffusion in PH3 Plasma Immersion Ion-Implanted Germanium Epilayer Grown on Silicon (100) Substrate through SiOx Capping Layer-Reference-Cited by-同舟云学术

Suppression of Phosphorous Out-Diffusion in PH₃ Plasma Immersion Ion-Implanted Germanium Epilayer Grown on Silicon (100) Substrate through SiO_x Capping Layer

Published:2020-01-01 Issue:1 Volume:61 Page:195-199
ISSN:1345-9678
Container-title:MATERIALS TRANSACTIONS
language:en
Short-container-title:Mater. Trans.

Author:

Baek Daeyoon¹,Shim Kyu-Hwan¹,Lee Sung-Nam²,Hong Woong-Ki³,Choi Chel-Jong¹

Affiliation:

1. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University

2. Jeonju Center, Korea Basic Science Institute

3. Department of Nano-Optical Engineering, Korea Polytechnic University

Publisher

Japan Institute of Metals

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.jstage.jst.go.jp/article/matertrans/61/1/61_MT-M2019210/_pdf

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3. 3) V. Janardhanam, H.J. Yun, I. Jyothi, S.H. Yuk, S.N. Lee, J. Won and C.J. Choi: Appl. Surf. Sci. 463 (2019) 91–95.

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