Strain variations in heteroepitaxial InP‐on‐Si grown by low‐pressure metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101137
Reference14 articles.
1. Heteroepitaxial growth of InP directly on Si by low pressure metalorganic chemical vapor deposition
2. High‐quality GaInAsP/InP heterostructures grown by low‐pressure metalorganic chemical vapor deposition on silicon substrates
3. Epitaxial growth of InP on Si using MIBE technique
4. Material properties of InP‐on‐Si grown by low‐pressure organometallic vapor‐phase epitaxy
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2. Ion-assisted nucleation and growth of GaN on sapphire(0001);Physical Review B;1998-08-15
3. Analysis of GaAs properties under biaxial tensile stress;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-07
4. Stresses and strains in lattice‐mismatched stripes, quantum wires, quantum dots, and substrates in Si technology;Journal of Applied Physics;1996-06
5. Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors;Semiconductor Science and Technology;1996-05-01
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