Role of relative tilt on the structural properties of GaInSb epitaxial layers grown on (001) GaSb substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370811
Reference33 articles.
1. 3.9‐μm InAsSb/AlAsSb double‐heterostructure diode lasers with high output power and improved temperature characteristics
2. InAs-GaSb hot electron transistors grown by metalorganic chemical vapor deposition
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