3.9‐μm InAsSb/AlAsSb double‐heterostructure diode lasers with high output power and improved temperature characteristics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112779
Reference23 articles.
1. Continuous-wave lasing at room temperature in InGaSbAs/GaAlSbAs injection heterostructures emitting in the spectral range 2.2–2.4 μm
2. New III-V double-heterojunction laser emitting near 3.2μm
3. Highly uniform, high quantum efficiency GaInAsSb/AlGaAsSb double heterostructure lasers emitting at 2.2 μm
4. 3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor‐phase epitaxy
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