Analysis and determination of the stress-optic coefficients of thin single crystal silicon samples
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1774259
Reference18 articles.
1. Photographs of the Stress Field Around Edge Dislocations
2. Infrared Studies of Birefringence in Silicon
3. Effect of Growth Parameters on the Residual Stress and Dislocation Density of Czochralski‐Grown Silicon Crystals
4. Quantitative photoelastic measurement of residual stress in LEC grown GaP crystals
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